TE Connectivity
Reflowable Thermal Protection for
Power Electronics Designs in Rugged Environments
METHOD OF OPERATION – ELECTRONIC ARMING
The RTP device is a unique thermal protector. It can be reflowed at temperatures up to 260°C without opening, yet in operation it will open at
temperatures well below 260°C. To achieve this functionality, the RTP device uses an electronic arming mechanism.
Electronic arming must be done after reflow, and can be done during final test.
The device is armed by sending a specified arming current through the ARM pin of the device. Arming is a time- & current-dependent event.
Arming times vs. current are provided in the “Arming Characteristics” section of this overview. Current can flow in either direction through
the ARM pin.
Prior to arming, R ARM should have resistance levels as specified in the “Arming Characteristics” section. Once armed, the ARM pin will be
electrically open relative to the P 1 or P TH pins.
Arming has been successful once R ARM exceeds the post-arming minimum resistance specified in the “Arming Characteristics” section. RTP
devices must be armed individually and cannot be armed simultaneously in series.
Once “armed”, the RTP device will permanently open when the device junction achieves its specified opening temperature.
Although multiple options exist, below is one simple arming option.
Sample Arming Options
During Test
P 1
Current Flow
Description
ARM pin connected between two test points
P TH PowerFET
ARM
Test
Point 1
RTP
Test
Point 2
P TH ?? ARM = Arming
In this case, pin P 1 is left “floating”, and arming can occur during test,
at a user defined time, by connecting to the Test Points and applying
sufficient current (I ARM ) between Test Point 1 and Test Point 2 until the
device is armed.
PRELIMINARY ABSOLUTE MAX RATINGS
Absolute Max Ratings
Max DC Open Voltage (1)
@ 16 V DC
RTP200R060SA
Max
32
200
Units
V DC
Max DC Interrupt Current (1)
ESD rating (Human Body Model)
Max Reflow Temperature (pre-arming)
Operating temperature limits, post-arming,
non-opening
@ 24 V DC
@ 32 V DC
130
100
25
260
-55
+175
A
KV
°C
°C
(1)
Performance capability at these conditions can be influenced by board design.
Performance should be verified in the user ’s system.
te.com/RTP-Launch/
相关PDF资料
RUEF090-1 POLYSWITCH PTC RESET 0.9A HOLD
RUEF110-AP POLYSWITCH PTC RESET 1.1A AMMO
RUEF110S POLYSWITCH PTC RESET 1.1A STRGT
RUEF135-1 POLYSWITCH PTC RESET 1.35A HOLD
RUEF135-AP POLYSWITCH PTC RESET 1.35A AMMO
RUEF135S POLYSWITCH PTC RESET 1.35A STRGT
RUEF160S POLYSWITCH PTC RESET 1.6A STRGT
RUEF160 POLYSWITCH RUE SERIES 1.60A
相关代理商/技术参数
RTP200R120SA-2 制造商:TE Connectivity 功能描述:FUSE THERMAL 200A 60VAC SMD
RTP21005-11 制造商:RFHIC 制造商全称:RFHIC 功能描述:This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
RTP21010-11 制造商:RFHIC 制造商全称:RFHIC 功能描述:This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
RTP21025-10 制造商:RFHIC 制造商全称:RFHIC 功能描述:The RTP21025-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.
RTP21025-11 制造商:RFHIC 制造商全称:RFHIC 功能描述:This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
RTP21050-10 制造商:RFHIC 制造商全称:RFHIC 功能描述:The RTP21050-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.
RTP21070-20 制造商:RFHIC 制造商全称:RFHIC 功能描述:The RTP21070-20 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.
RTP22A12M9 制造商:OSLO SWITCH 功能描述: